Reverse voltage generation circuit

Details Reverse voltage generation circuit Reverse voltage generation circuit

2006-01-03

2006-01-03

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C257S536000

Reexamination Certificate

active

06982910

ABSTRACT:
An improved reverse voltage generation circuit is offered. The reverse voltage generation circuit can be formed in a single semiconductor substrate, prevents leakage current of constituting MOS transistors and stabilizes operation of the circuit. A first and a second charge transfer MOS transistors and a first and a second driver MOS transistors are formed in a surface of a P-type semiconductor substrate. The first charge transfer MOS transistor and the first and the second driver MOS transistors are of a P-channel type, and formed in a first N-well, a second N-well and a third N-well, respectively. The first, the second and the third N-wells are formed in a surface of a P-type semiconductor substrate. The second charge transfer MOS transistor is of an N-channel type and formed in the surface of the P-type semiconductor substrate. A power supply voltage is applied to a source of the first driver MOS transistor and an inverted voltage is generated and outputted from a drain of the second charge transfer MOS transistor.

REFERENCES:
patent: 5399928 (1995-03-01), Lin et al.
patent: 2004/0145583 (2004-07-01), Morita
patent: 2001-258241 (2001-09-01), None

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