Method of manufacturing a semiconductor device having TFTs...

Details Method of manufacturing a semiconductor device having TFTs... Method of manufacturing a semiconductor device having TFTs...

2006-04-11

2006-04-11

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S150000, C438S166000, C438S482000, C438S486000, C257S059000, C257S064000, C257S065000, C257S066000, C257S067000, C257S072000, C257S347000

Reexamination Certificate

active

07026193

ABSTRACT:
In a circuit including at least one thin film transistor formed on an insulating substrate, a region105to which metal elements that promote crystallinity are added is disposed apart from a semiconductor island region101that forms the thin film transistor by a distance y, has a width w, and extends longitudinally over an end portion of the semiconductor island region101by a distance x. Also, in a TFT manufactured in a region which is not interposed between the nickel added regions, another nickel added region is disposed (resultantly, which is interposed between two nickel added regions). Further, all the intervals between the respective nickel added regions are preferably identified with each other. Thus, a thin film transistor circuit being capable of a high speed operation (in general, some tens of Mhz and more) is formed. In particular, correcting the difference of crystal growths, using a crystalline silicon film added with nickel, TFTs with uniform characteristics can be provided. Also, a crystal growth distance of a region where is not interposed between the nickel added regions can be sufficient.

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