Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-05-30

2006-05-30

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S402000, C257S404000, C257S408000, C438S289000, C438S291000

Reexamination Certificate

active

07053450

ABSTRACT:
A MISFET in a semiconductor device has a gate insulating film provided on a substrate, a gate electrode provided on the gate insulating film, sidewalls provided on the side surfaces of the gate electrode, lightly doped diffusion layers provided in the respective regions of the substrate located below the edge portions of the gate electrodes, heavily doped diffusion layers provided in the respective regions of the substrate located laterally below the gate electrode and the sidewalls, and pocket diffusion layers covering the lower portions of the lightly doped diffusion layers and parts of the side surfaces thereof in overlapping relation with each other below the gate electrode. Impurity concentrations in the pocket diffusion layers are set such that the threshold of the MISFET has a desired value.

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