Plasma treatment and etching process for ultra-thin...

Details Plasma treatment and etching process for ultra-thin... Plasma treatment and etching process for ultra-thin...

2006-03-07

2006-03-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S711000, C438S714000, C438S733000, C438S771000, C438S788000

Reexamination Certificate

active

07008878

ABSTRACT:
A method for dry etching a dielectric layer including providing a substrate; forming at least one overlying dielectric layer over the substrate; subjecting the at least one overlying layer to a plasma oxidizing process; and, subjecting the at least one overlying layer to a plasma etching process.

REFERENCES:
patent: 5116460 (1992-05-01), Bukhman
patent: 6380056 (2002-04-01), Shue et al.
patent: 6479402 (2002-11-01), Yang et al.

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