Method of forming a conductive contact

Details Method of forming a conductive contact Method of forming a conductive contact

2006-04-04

2006-04-04

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000

Reexamination Certificate

active

07022618

ABSTRACT:
In one implementation, an etching process includes forming a carbon containing material over a substrate and plasma etching at a temperature of at least 400° C. using a hydrogen or oxygen containing plasma. In one implementation, a plasma etching process includes forming openings in a masking layer over a substrate and etching material beneath the masking through the openings. The masking layer is removed and the substrate is plasma etched at a temperature of at least 400° C. In one implementation, an etching process includes forming a residue over the substrate during a first etching and subsequently plasma etching to remove the residue. In one implementation, a chemical vapor deposition process includes positioning a semiconductor substrate within a plasma enhanced chemical vapor deposition reactor, plasma etching using a first gas chemistry, depositing a material over the substrate within the reactor using a second gas chemistry.

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