Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-04-04

2006-04-04

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S652000, C438S586000, C438S643000, C438S683000

Reexamination Certificate

active

07022601

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed wherein a WSiN layer is deposited in a contact hole as a barrier metal using an ALD process. A tungsten layer is deposited on the WSiN layer in the nucleation stage thereof. Then, using a CVD process, the contact hole is completely filled with a tungsten layer. The WSiN layer is continuously and uniformly deposited in the contact hole having high aspect ratio, and the tungsten layer in the nucleation stage can be continuously and uniformly deposited on the WSiN layer, thus completely filling the contact hole with a tungsten layer deposited by the CVD process.

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patent: 2003/0219979 (2003-11-01), Choi et al.
patent: 2004/0087136 (2004-05-01), Wu et al.

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