Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-09-19
2006-09-19
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S105000, C257S628000, C257S930000, C257SE21054, C257SE21699
Reexamination Certificate
active
07109521
ABSTRACT:
An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then formed in the first epitaxial layer. The second features include at least one sidewall that is oriented nonparallel to the crystallographic direction. A second epitaxial silicon carbide layer is then grown on the surface of the first epitaxial silicon carbide layer that includes the second features therein.
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Hallin Christer
Lendenmann Heinz
Sumakeris Joseph John
Cree Inc.
Myers Bigel Sibley & Sajovec P.A.
Nguyen Joseph
Parker Kenneth
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