Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-04-18
2006-04-18
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S163000, C438S279000, C438S303000
Reexamination Certificate
active
07029958
ABSTRACT:
A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin in the fin area, and forming a mask in the fin area. The method further includes etching the mask to expose a channel area of the MOSFET, etching the fin to thin a width of the fin in the channel area, forming a gate over the fin, and forming contacts to the gate, the source region, and the drain region.
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Ahmed Shibly S.
Buynoski Matthew S.
Dakshina-Murthy Srikanteswara
Krivokapic Zoran
Tabery Cyrus E.
Advanced Micro Devices , Inc.
Harrity & Snyder LLP
Picardat Kevin M.
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