Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-10
2006-01-10
Baumeister, B. William (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S613000, C438S617000, C438S106000, C438S107000, C438S108000, C438S118000, C438S125000
Reexamination Certificate
active
06984576
ABSTRACT:
A method of connecting a conductive trace and an insulative base to a semiconductor chip includes providing a semiconductor chip, a metal base, an insulative base, a routing line and an interconnect, wherein the chip includes a conductive pad, the metal base is disposed on a side of the insulative base that faces away from the chip, the routing line is disposed on a side of the insulative base that faces towards the chip, and the interconnect extends through a via in the insulative base and electrically connects the metal base and the routing line, forming an opening that extends through the insulative base and exposes the pad, forming a connection joint that electrically connects the routing line and the pad, and etching the metal base such that an unetched portion of the metal base forms a pillar that overlaps and is aligned with the via and contacts the interconnect, wherein a conductive trace includes the routing line, the interconnect and the pillar. Preferably, the opening extends through an insulative adhesive that attaches the routing line to the chip.
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Chiang Cheng-Lien
Lin Charles W. C.
Baumeister B. William
Berry Renee R.
Bridge Semiconductor Corporation
Sigmond David M.
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