Method for forming flowable dielectric layer in...

Details Method for forming flowable dielectric layer in... Method for forming flowable dielectric layer in...

2006-04-11

2006-04-11

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S797000, C257S634000

Reexamination Certificate

active

07026256

ABSTRACT:
The method for forming a flowable dielectric layer without micro-voids therein in a semiconductor device is employed to utilize a ultra-violet (UV) bake process. The method includes steps of: forming a plurality of patterns on a semiconductor substrate, wherein narrow and deep gaps are formed therebetween; forming a flowable dielectric layer so as to fill the gaps between the patterns; carrying out a baking process for densifying the flowable dielectric layer from a bottom face thereof; forming a plurality of contact holes by selectively etching the flowable dielectric layer; carrying out a pre-cleaning process in order to remove native oxide and impurity substances on the contact holes; and forming a plurality of contact plugs by filling a conductive material into the contact holes.

REFERENCES:
patent: 6703321 (2004-03-01), Geiger et al.
patent: 2005/0020093 (2005-01-01), Ahn et al.
patent: 1020030059445 (2003-07-01), None

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