Semiconductor element having protruded bump electrodes

Details Semiconductor element having protruded bump electrodes Semiconductor element having protruded bump electrodes

2006-07-04

2006-07-04

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S615000, C438S613000, C257SE23024

Reexamination Certificate

active

07071090

ABSTRACT:
A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving a bonding capillary upward, moving the bonding capillary sideways and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The Au wire is prevented from coming in contact with portions around the ball bond portion other than the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.

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