Sputtering target for forming high-resistance transparent...

Details Sputtering target for forming high-resistance transparent... Sputtering target for forming high-resistance transparent...

Filed on

2006-03-07

Date issued

2006-03-07

Examiner

Versteeg, Steven (Department: 1753)

Patent Class

Chemistry: electrical and wave energy

SubClass

Processes and products

SubSubClass

Coating, forming or etching by sputtering

Other Related Categories

C204S192220, C204S192290, C204S192260, C204S298130, C423S618000, C423S592100

Type

Reexamination Certificate

Status

active

Patent number

07008519

Description

ABSTRACT:
The present invention provides an ITO sputtering target for forming a high-resistance transparent conductive film which target can be used virtually in a DC magnetron sputtering apparatus and can form a high-resistance, transparent film, and a method for producing a high-resistance transparent conductive film. The sputtering target for forming a high-resistance transparent conductive film having a resistivity of about (0.8–10)×10−3Ωcm contains indium oxide, an insulating oxide, and optionally tin oxide.

REFERENCES:
patent: 6669830 (2003-12-01), Inoue et al.
patent: 2003/0218153 (2003-11-01), Abe
patent: 9-209134 (1997-08-01), None
English translation of JP 9-209134.
English translation of JP 2003-105532.

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