Method of forming barrier layers

Details Method of forming barrier layers Method of forming barrier layers

2006-09-05

2006-09-05

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S686000, C438S688000, C438S932000, C257SE23150

Reexamination Certificate

active

07101779

ABSTRACT:
Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of MxAlyNzBwalloy diffusion barriers, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero.

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