Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-17
2006-01-17
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000
Reexamination Certificate
active
06987295
ABSTRACT:
A trench capacitor for use in a DRAM memory cell contains a lower capacitor electrode, a storage dielectric, and an upper capacitor electrode, which are at least partially disposed in a trench. The lower capacitor electrode adjoins, in a lower trench region, a wall of the trench, while in the upper trench region there is a spacer layer that adjoins a wall of the trench and is made from an insulating material. The upper electrode contains at least three layers, a first layer disposed in the trench on the storage dielectric and containing doped polysilicon, a second layer disposed on the first layer and containing metal-silicide, and a third layer disposed on the second layer and containing doped polysilicon. The layers of the upper electrode in each case extending along the walls and the base of the trench up to at least the upper edge of the spacer layer.
REFERENCES:
patent: 5905279 (1999-05-01), Nitayama et al.
patent: 6180480 (2001-01-01), Economikos et al.
patent: 6194755 (2001-02-01), Gambino et al.
patent: 6258689 (2001-07-01), Bronner et al.
patent: 6359300 (2002-03-01), Economikos et al.
patent: 6781180 (2004-08-01), Martin et al.
patent: 2004/0036102 (2004-02-01), Sell et al.
patent: 0 967 643 (1999-12-01), None
patent: 0 981 164 (2000-02-01), None
patent: 01/17014 (2001-03-01), None
The American Heritage Dictionary, Second College Edition, p. 867, plain meaning definition of “on”, 1982.
Yamada, K. et al.: “Deep-Trenched Capacitor Technology for 4 Mega Bit Dynamic RAM”, IEEE, 1985, pp. 702-705.
Sänger Annette
Schumann Dirk
Sell Bernhard
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Prenty Mark V.
Stemer Werner H.
LandOfFree
Trench capacitor and method for fabricating the trench... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench capacitor and method for fabricating the trench..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench capacitor and method for fabricating the trench... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3524710