Method for transistor gate dielectric layer with uniform...

Details Method for transistor gate dielectric layer with uniform... Method for transistor gate dielectric layer with uniform...

2005-08-23

2005-08-23

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S216000, C438S287000, C438S792000, C438S787000, C438S774000, C438S762000, C438S765000, C438S769000, C438S770000, C438S775000, C438S776000, C438S777000

Reexamination Certificate

active

06933248

ABSTRACT:
The instant invention describes a method for forming a dielectric film with a uniform concentration of nitrogen. The films are formed by first incorporating nitrogen into a dielectric film using RPNO. The films are then annealed in N2O which redistributes the incorporated species to produce a uniform nitrogen concentration.

REFERENCES:
patent: 5698464 (1997-12-01), Tsunoda
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5972804 (1999-10-01), Tobin et al.
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6251801 (2001-06-01), Saki et al.
patent: 6503846 (2003-01-01), Niimi et al.

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