Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-06-28
2005-06-28
Smith, Matthew (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S697000, C438S584000
Reexamination Certificate
active
06911396
ABSTRACT:
Concentration of electric current due to an additive (particularly, a brightener) remaining or precipitated in a high concentration at grain boundary triple points and wiring groove portions in the surface layer of a copper plating film is obviated, whereby precedent dissolution and/or abnormal dissolution due to concentration of electric current is restrained, and an electropolished surface of the copper plating film with excellent surface smoothness is obtained.A method of producing a metallic film includes the steps of: forming a metallic plating film (copper plating film (15)) by use of a plating solution prepared by adding a plating additive for restraining void generation, bottom-up fill and overfill; and electropolishing the metallic plating film by use of an electropolishing solution prepared by adding a polishing additive capable of reacting or coupling with the plating additive component contained or precipitated in the surface layer of the metallic plating film.
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International Search Report.
Preliminary Examination Search Report.
Nogami Takeshi
Sato Shuzo
Segawa Yuji
Kananen Ronald P.
Luu Chuong Anh
Smith Matthew
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