Method for co-fabricating strained and relaxed crystalline...

Details Method for co-fabricating strained and relaxed crystalline... Method for co-fabricating strained and relaxed crystalline...

2005-12-06

2005-12-06

Smith, Brad (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S933000, C438S938000

Reexamination Certificate

active

06972245

ABSTRACT:
One embodiment of the present invention provides a system for co-fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.

REFERENCES:
patent: 5961877 (1999-10-01), Robinson et al.
patent: 5989947 (1999-11-01), Dilger et al.
patent: 6184144 (2001-02-01), Lo
patent: 6281097 (2001-08-01), Aoyama
patent: 6350993 (2002-02-01), Chu et al.
patent: 6403975 (2002-06-01), Brunner et al.
patent: 2002/0168864 (2002-11-01), Zhiyuan et al.
patent: 2002/0197803 (2002-12-01), Leitz et al.
patent: 2003/0052406 (2003-03-01), Lochtefeld et al.
patent: 2005/0048778 (2005-03-01), Bedell et al.

Affiliated with

Also associated with

Rating

Method for co-fabricating strained and relaxed crystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for co-fabricating strained and relaxed crystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for co-fabricating strained and relaxed crystalline... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3520087