Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2005-08-02
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S645000
Reexamination Certificate
active
06924225
ABSTRACT:
An electrically conductive contact can be used to connect an integrated component to an interconnect. A sacrificial layer is deposited on a liner and planarized until a surface of the integrated component is uncovered. The sacrificial layer is patterned to define the later contacts. The layer is covered in a partial region above contact connection regions. An interlevel insulator is deposited and patterned, so that the sacrificial layer can then be stripped out from the partial region. After the removal of the liner, a conductive layer is deposited into the cavity formed as a result of the stripping-out process on the uncovered contact connection regions and optionally into trenches formed at the outset within the interlevel insulator.
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Popp Martin
Temmler Dietmar
Ghyka Alexander
Infineon - Technologies AG
Slater & Matsil L.L.P.
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