Semiconductor device and fabrication process thereof

Details Semiconductor device and fabrication process thereof Semiconductor device and fabrication process thereof

2005-11-01

2005-11-01

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S197000, C438S652000

Reexamination Certificate

active

06960516

ABSTRACT:
A method of fabricating a semiconductor device includes the steps depositing a metal film on a silicon substrate so as to cover a polysilicon gate electrode and a diffusion region on the silicon substrate, forming a silicide layer by causing a reaction between a surface of the polysilicon gate electrode and the metal film and between a surface of the diffusion region and the metal film, and removing the metal film after the step of forming the silicide layer, wherein there is provided, before the deposition step of the metal film, a step of removing a native oxide film from a surface of the polysilicon gate electrode and a surface of the diffusion region, and wherein there is provided, after the step of removing the native oxide film, the step of forming a chemical oxide film on the surface of the polysilicon gate electrode and the surface of the diffusion region.

REFERENCES:
patent: 6475893 (2002-11-01), Giewont et al.
patent: 2002-334850 (2002-11-01), None

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