Dielectric film

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2005-08-23

2005-08-23

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S639000, C257S642000, C257S632000

Reexamination Certificate

active

06933246

ABSTRACT:
A low k porous dielectric film is described wherein the exposed surface or surfaces of the film are substantially non-porous. A densification method is described for treating such exposed surfaces to render porous surfaces non-porous.

REFERENCES:
patent: 5866945 (1999-02-01), Chen et al.
patent: 5958798 (1999-09-01), Shields
patent: 5985747 (1999-11-01), Taguchi
patent: 6114250 (2000-09-01), Ellingboe et al.
patent: 6114259 (2000-09-01), Sukharev et al.
patent: 6168726 (2001-01-01), Li et al.
patent: 6204192 (2001-03-01), Zhao et al.
patent: 6351039 (2002-02-01), Jin et al.
patent: 6528432 (2003-03-01), Ngo et al.
patent: 6562416 (2003-05-01), Ngo et al.
patent: 6592770 (2003-07-01), Dobson
patent: 2001/0038889 (2001-11-01), Pangrle et al.
patent: 2002/0093075 (2002-07-01), Gates et al.
patent: 2002/0164877 (2002-11-01), Catabay et al.
patent: 1 195 801 (2002-04-01), None
patent: WO 02/01621 (2002-01-01), None
American Institute of Chemical Engineers, “Materials Engineering and Sciences Division Newsletter”, Sep. 2000, vol. 31, Issue 1, pp. 1-10.
R.A. Donaton et al., “Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films”,IEEE, 2000, pp. 93-95.
Related co-pending U.S. non-provisional Appl. No. 09/554,290, filed May 11, 2000, by Christopher David Dobson, and entitled “Method Of Treating An Insulating Layer”.
Related co-pending U.S. non-provisional application (Serial No. not yet assigned), filed May 16, 2003, by Christopher David Dobson, entitled Method of Treating An Insulating Layer, and which is a Divisional of U.S. Appl. No. 09/554,290.

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