Method of fabricating a semiconductor device having a...

Details Method of fabricating a semiconductor device having a... Method of fabricating a semiconductor device having a...

2005-11-08

2005-11-08

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

06962882

ABSTRACT:
While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO2.

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Nozaki. S., et al., “Ultralow K Nanoporous Silica by Oxidation of Silicon Nanoparticles.” The University of Electro-Communications, Department of Electronic Engineering, Tokyo, Japan, presented Jun. 3, 2002, at the 2002 IEEE International Interconnect Technology Conference in Burlingame, CA.

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