Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2005-12-06

2005-12-06

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000, C365S230060

Reexamination Certificate

active

06972984

ABSTRACT:
A ferroelectric memory device enabling high-speed access has a voltage selection circuit and a potential gradient correction section. The voltage selection circuit selects a plurality of different voltages generated by a power circuit and outputs them to voltage supply lines, fixing the potential of either the unselected-word-line-voltage-supply-line or the unselected-bit-line-voltage-supply-line. The potential gradient correction section reduces one difference in potential gradient on a side with no fixed potential, which is either the difference between the potential gradient of the selected-word-line-voltage-supply-line and the potential gradient of the unselected-bit-line-voltage-supply-line, or the difference between the potential gradient of the selected bit line voltage supply line and the potential gradient unselected-word-line-voltage-supply-line.

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