Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2005-12-27
2005-12-27
Zarneke, David A. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
Reexamination Certificate
active
06979901
ABSTRACT:
In a semiconductor heat-dissipating substrate made of a Cu—W alloys whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 μm or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 μm or less, thermal conductivity of 210 W/m·K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.
REFERENCES:
patent: 3568852 (1971-03-01), Howard
patent: 3984002 (1976-10-01), Howard
patent: 4680618 (1987-07-01), Kuroda et al.
patent: 4997114 (1991-03-01), Petrou
patent: 5086333 (1992-02-01), Osada et al.
patent: 5099310 (1992-03-01), Osada et al.
patent: 5481136 (1996-01-01), Kohmoto et al.
patent: 5503010 (1996-04-01), Yamanaka
patent: 5881931 (1999-03-01), Stanfield
patent: 6114048 (2000-09-01), Jech et al.
patent: 6170679 (2001-01-01), Frye et al.
patent: 6219364 (2001-04-01), Dei
patent: 6726067 (2004-04-01), Louw
patent: 0482812 (1991-10-01), None
patent: 0859410 (1998-08-01), None
patent: 59-141248 (1984-08-01), None
patent: 04-348062 (1992-03-01), None
patent: 05-003265 (1993-08-01), None
patent: 10-088272 (1998-04-01), None
patent: 10-280082 (1998-10-01), None
Abe Yugaku
Sasame Akira
Takashima Kouichi
Yamagata Shin-ichi
Judge James
Sumitomo Electric Industries Ltd.
Zarneke David A.
LandOfFree
Semiconductor heat-dissipating substrate, and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor heat-dissipating substrate, and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor heat-dissipating substrate, and manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3517275