Semiconductor device having gate electrode in which...

Details Semiconductor device having gate electrode in which... Semiconductor device having gate electrode in which...

2005-11-08

2005-11-08

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

06963100

ABSTRACT:
Performance for a gate insulation film of an insulated gate transistor is enhanced. A depletion layer is generated in a region of a gate electrode12which is provided in contact with a gate insulation film4in an OFF state, and the depletion layer disappears or a width thereof is reduced in an ON state.

REFERENCES:
patent: 5365094 (1994-11-01), Takasu
patent: 5365098 (1994-11-01), Miyamoto et al.
patent: 6465295 (2002-10-01), Kitamura
patent: 05-190798 (1993-07-01), None
patent: 09-205203 (1997-08-01), None

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