Structure and method for silicided metal gate transistors

Details Structure and method for silicided metal gate transistors Structure and method for silicided metal gate transistors

2005-06-21

2005-06-21

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

06908850

ABSTRACT:
A structure and method are provided for fabricating a field effect transistor (FET) having a metal gate structure. A metal gate structure is formed in an opening within a dielectric region formerly occupied by a sacrificial gate. The metal gate structure includes a first layer contacting a gate dielectric formed over a semiconductor region of a substrate. The first layer includes a material selected from the group consisting of metals and metal compounds. The gate further includes a silicide formed over the first layer. The FET further includes a source region and a drain region formed on opposite sides of the gate, the source and drain regions being silicided after the first layer of the gate is formed.

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