Semiconductor device capable of preventing a pattern collapse

Details Semiconductor device capable of preventing a pattern collapse Semiconductor device capable of preventing a pattern collapse

2005-06-07

2005-06-07

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S618000, C257S620000

Reexamination Certificate

active

06903428

ABSTRACT:
A semiconductor device is disclosed that is capable of preventing a pattern collapse phenomenon in a cell edge area in which a pattern is more fragile. The semiconductor device has a lower pattern density in an edge area than in a central area of a wafer and includes a plurality of bar-type patterns allocated at a predetermined distance in the central area of the wafer; a plurality of dummy patterns formed in the edge area; and a plurality of a connection pattern for coupling at least two of the bar-type patterns to each other, wherein the connection patterns of the plurality of dummy patterns offset or staggered with respect to each other to form a disconnected zigzag pattern.

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Notice of Preliminary Rejection issued by the Korean Intellectual Property Office dated Oct. 18, 2004.

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