Ferroelectric memory with wide operating voltage and...

Details Ferroelectric memory with wide operating voltage and... Ferroelectric memory with wide operating voltage and...

2005-02-15

2005-02-15

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S109000, C365S065000

Reexamination Certificate

active

06856534

ABSTRACT:
Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polarization direction, thereby allowing for a single cell to contain more than one bit of data.

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“A Survey of Circuit Innovations in Ferroelectric Random-Access Memories”, Ali Sheikholeslami and P. Glenn Gulak, Proceedings of the IEEE, vol. 88, No. 5, May, 2000, pp. 667-689.
European Search Report, application No. 03103626.2, Texas Instrument s Inc., Ref. TI-33415EP, 3 pgs.

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