Trench MOSFET superjunction structure and method to manufacture

Details Trench MOSFET superjunction structure and method to manufacture Trench MOSFET superjunction structure and method to manufacture

2005-12-27

2005-12-27

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S331000, C438S259000, C438S587000

Reexamination Certificate

active

06979862

ABSTRACT:
A power semiconductor device including a plurality of trenches each for supporting a gate structure adjacent a channel region, and a plurality of drain columns each under the bottom of each trench, and each formed by multiple high energy implants.

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