Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-06
2005-12-06
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S308000, C257S309000
Reexamination Certificate
active
06972452
ABSTRACT:
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from being adsorbed onto the surface of the first conductive layer. In one embodiment, a second conductive layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates an oxide formed between the two layers as a result of subsequent thermal treatments. In another embodiment, a dielectric layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates the ability of the first conductive layer to incorporate oxygen from the dielectric.
REFERENCES:
patent: 3649886 (1972-03-01), Kooi
patent: 4013485 (1977-03-01), Ma et al.
patent: 4599678 (1986-07-01), Wertheimer et al.
patent: 4717602 (1988-01-01), Yamazaki
patent: 4814842 (1989-03-01), Nakagawa et al.
patent: 4823182 (1989-04-01), Okumura
patent: 5089441 (1992-02-01), Moslehi
patent: 5232871 (1993-08-01), Ho
patent: 5332444 (1994-07-01), George et al.
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5438012 (1995-08-01), Kamiyama
patent: 5440174 (1995-08-01), Nishitsuji
patent: 5552339 (1996-09-01), Hsieh
patent: 5552341 (1996-09-01), Lee
patent: 5622888 (1997-04-01), Sekine et al.
patent: 5670808 (1997-09-01), Nishihori et al.
patent: 5700710 (1997-12-01), Zenke
patent: 5719410 (1998-02-01), Suehiro et al.
patent: 5723384 (1998-03-01), Park et al.
patent: 5726083 (1998-03-01), Takaishi
patent: 5733816 (1998-03-01), Iyer et al.
patent: 5753559 (1998-05-01), Yew et al.
patent: 5843843 (1998-12-01), Lee et al.
patent: 5846859 (1998-12-01), Lee
patent: 5852307 (1998-12-01), Aoyama et al.
patent: 5853500 (1998-12-01), Joshi et al.
patent: 5858831 (1999-01-01), Sung
patent: 5861675 (1999-01-01), Sasaki et al.
patent: 5888588 (1999-03-01), Nagabushnam et al.
patent: 5913145 (1999-06-01), Lu et al.
patent: 5955758 (1999-09-01), Sandhu et al.
patent: 5956594 (1999-09-01), Yang et al.
patent: 5963826 (1999-10-01), Takanabe et al.
patent: 5970384 (1999-10-01), Yamazaki et al.
patent: 5994183 (1999-11-01), Huang et al.
patent: 6010931 (2000-01-01), Sun et al.
patent: 6017818 (2000-01-01), Lu
patent: 6060741 (2000-05-01), Huang
patent: 6077742 (2000-06-01), Chen et al.
patent: 6081010 (2000-06-01), Sanchez
patent: 6087257 (2000-07-01), Park et al.
patent: 6100187 (2000-08-01), Hintermaier et al.
patent: 6100193 (2000-08-01), Suehiro et al.
patent: 6107152 (2000-08-01), Derderian
patent: 6114200 (2000-09-01), Yew et al.
patent: 6136690 (2000-10-01), Li
patent: 6146959 (2000-11-01), DeBoer et al.
patent: 6153519 (2000-11-01), Jain et al.
patent: 6156674 (2000-12-01), Li et al.
patent: 6162715 (2000-12-01), Mak et al.
patent: 6165802 (2000-12-01), Cuchiaro et al.
patent: 6190837 (2001-02-01), Jung et al.
patent: 6194263 (2001-02-01), Kim et al.
patent: 6201276 (2001-03-01), Agarwal et al.
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6235632 (2001-05-01), Nogami et al.
patent: 6245662 (2001-06-01), Naik et al.
patent: 6255688 (2001-07-01), Lee et al.
patent: 6281542 (2001-08-01), Wu
patent: 6303510 (2001-10-01), Chien et al.
patent: 6303972 (2001-10-01), Agarwal
patent: 6309713 (2001-10-01), Mak et al.
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6350706 (2002-02-01), Howard
patent: 6355512 (2002-03-01), Yamazaki et al.
patent: 6372633 (2002-04-01), Maydan et al.
patent: 6383951 (2002-05-01), Li
patent: 6468854 (2002-10-01), Agarwal
patent: 6472264 (2002-10-01), Agarwal
patent: 6479340 (2002-11-01), Agarwal
patent: 6489194 (2002-12-01), Agarwal
patent: 6607975 (2003-08-01), Agarwal
patent: 6624069 (2003-09-01), Lee et al.
patent: 2001/0001501 (2001-05-01), Lee et al.
patent: 2002/0187633 (2002-12-01), Akram
patent: 355011329 (1980-01-01), None
patent: 410070091 (1998-03-01), None
Anonymous, “Oxide-Free Dielectric/GaAs Interface With No Excess As”, IBM Technical Disclosure Bulletin, vol. 33, No. 11, Apr. 11, 1991, p. 352.
Schulz, S.E. et al., “Influence of Water Preclean Before Selective Tungsten CVD on Surface Properties of Interconnect and Intermetal Dielectric Materials”, Physica Status Solidi A, vol. 145, No. 2, Oct. 16, 1994, pp. 311-318.
Dorsey & Whitney LLP
Fenty Jesse
Jackson Jerome
LandOfFree
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