Process for separating dies on a wafer

Semiconductor device manufacturing: process – Semiconductor substrate dicing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S462000, C438S464000, C438S465000

Reexamination Certificate

active

06849523

ABSTRACT:
A process for separating IC dies from a wafer substrate. In one embodiment, complete separation channels are initially cut through the wafer between dies along one axis. Next, partial separation channels are cut into the wafer along an intersecting axis, leaving wafer material connecting adjacent dies. In another embodiment, partial separation channels are cut into the wafer along one axis, after which complete separation channels are cut through the wafer along the intersecting axis. In still another embodiment, partial separation channels are cut along both axes.

REFERENCES:
patent: 3040489 (1962-06-01), Da Costa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for separating dies on a wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for separating dies on a wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for separating dies on a wafer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3513180

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.