Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-30
2005-08-30
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S072000, C349S043000
Reexamination Certificate
active
06936845
ABSTRACT:
A thin film transistor array panel is provided, which includes: an insulating substrate; a first signal wire formed on the insulating substrate; a second signal wire formed on the insulating substrate and intersecting the first signal wire in an insulating manner; first and second pixel electrodes formed in a pixel area defined by the intersections of the first and the second signal wires and including a plurality of subareas partitioned by cutouts; a direction control electrode formed in the pixel area and including a portion overlapping at least one of the cutouts; and a first thin film transistor connected to the direction control electrode, the first signal wire, and the second signal wire.
REFERENCES:
patent: 6650379 (2003-11-01), Baek et al.
Hong Sung-Kyu
Kim Hee-Seob
Kim Jong-Lae
Shin Kyong-Ju
Yang Young-Chol
McGuireWoods LLP
Nelms David
Samsung Electronics Co,. Ltd.
Tran Mai-Huong
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