Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-20
2005-12-20
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S319000
Reexamination Certificate
active
06977411
ABSTRACT:
The semiconductor device comprises a first well14of a first conduction type formed in a semiconductor substrate10; a second well16of a second conduction type formed in the first well14; and a transistor40including a control gate18formed of an impurity region of the first conduction type formed in the second well16, a first impurity diffused layer26and a second impurity diffused layer33formed with a channel region25therebetween, and a floating gate electrode20formed on the channel region25and the control gate18with a gate insulation film24therebetween. The control gate18is buried in the semiconductor substrate10, which makes it unnecessary to form the control gate18on the floating gate electrode20. Thus, the memory transistor and the other transistors, etc. can be formed by the same fabricating process. Thus, the fabrication processes can be less and the semiconductor device can be inexpensive.
REFERENCES:
patent: 6410389 (2002-06-01), Cappelletti et al.
patent: 5-55602 (1993-03-01), None
patent: 2002-15587 (2002-01-01), None
Furuyama Takaaki
Ito Masaki
Katayama Masaya
Kawabata Shozo
Fujitsu Limited
Vu Hung
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