Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S303000, C257S306000, C257S310000, C257S311000, C438S238000, C438S239000, C438S386000, C438S399000
Reexamination Certificate
active
06849894
ABSTRACT:
On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.
REFERENCES:
patent: 6188098 (2001-02-01), Amanuma
patent: 6465370 (2002-10-01), Schrems et al.
patent: 6605835 (2003-08-01), Lee
Wolf, “Silicon Processing for the VLSI Era”, Lattice Press, vol. 2, pp. 434-435.*
Office Action dated Mar. 25, 2004 for the corresponding Taiwan patent application.
Hieda Katsuhiko
Lin Jun
Suzuki Toshiya
Flynn Nathan J.
Fujitsu Limited
Kabushiki Kaisha Toshiba
Westerman Hattori Daniels & Adrian LLP
Wilson Scott R.
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