Semiconductor memory device with a pair of floating gates

Details Semiconductor memory device with a pair of floating gates Semiconductor memory device with a pair of floating gates

2005-06-07

2005-06-07

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S317000

Reexamination Certificate

active

06903405

ABSTRACT:
A floating gate is provided in the form of two separated parts in one memory cell to allow each of the floating gates to be individually programmable, thereby enabling the integration to be doubled in the same memory cell as compared to the case in which a single floating gate is provided.

REFERENCES:
patent: 6093945 (2000-07-01), Yang
patent: 6329687 (2001-12-01), Sobek et al.
patent: 2002/0040992 (2002-04-01), Manabe et al.
patent: 5-48113 (1993-02-01), None
patent: 5-152579 (1993-06-01), None
patent: 2626523 (1997-04-01), None

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