Semiconductor device

Details Semiconductor device Semiconductor device

2005-11-29

2005-11-29

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06969887

ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type, a lightly-doped semiconductor layer of the first conductivity type formed on the first major surface of the substrate, a first semiconductor region of the first conductivity type formed on an island-shaped region on the lightly-doped semiconductor layer, a first electrode surrounding the first semiconductor region and buried at a deeper position than the first semiconductor region, a second semiconductor region formed on the second major surface of the substrate, a buried field relaxation layer formed in the lightly-doped semiconductor layer between a bottom surface of the first electrode and the second semiconductor region, including a first field relaxation layer of the first conductivity type and second field relaxation layers of the second conductivity type formed at two ends of the first field relaxation layer, second and third electrodes formed on the first and second semiconductor regions, respectively.

REFERENCES:
patent: 6309929 (2001-10-01), Hsu et al.
patent: 2001/0008291 (2001-07-01), Aoki et al.
patent: 2002-83963 (2002-03-01), None
patent: 2003-69042 (2003-03-01), None
patent: 2003-224277 (2003-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3511149