Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-21
2005-06-21
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000
Reexamination Certificate
active
06909137
ABSTRACT:
The present invention comprises a method including the steps of providing a substrate; forming a trench in the substrate; forming a buried plate in the substrate about the trench; depositing a dielectric layer within the trench; and then depositing a P-type metal atop the dielectric layer, where the dielectric layer is positioned between the P-type metal and the buried plate. Another aspect of the present invention provides a trench capacitor where said trench capacitor comprises a trench formed in a substrate, a buried plate formed in the substrate about the trench; a node dielectric; and a P-type metal liner deposited within the trench, where the P-type metal liner is separated from the buried plate by the node dielectric. A P-type metal is defined as a metal having a work function close to the Si valence band, approximately equal to 5.1 eV.
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Divakaruni Ramachandra
Mandelman Jack A.
Park Dae-Gyu
Anderson, Esq. Jay H.
Pizarro Marcos D.
Weiss Howard
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