Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S338000, C257S350000, C257S351000, C257S357000, C257S371000, C438S152000, C438S153000, C438S199000, C438S223000, C438S224000, C438S227000, C438S228000
Reexamination Certificate
active
06853037
ABSTRACT:
A semiconductor device includes a relatively lower threshold level MOSFET and relatively higher threshold level MOSFETs of n- and p-types. The higher threshold level MOSFETs have gate oxide films which is thicker than that of the lower threshold level MOSFET and, in addition, the gate oxide film of the higher threshold level MOSFET of n-type is thicker than that of the higher threshold level MOSFET of p-type. To fabricate the semiconductor device, implantation treatments of fluorine ions are carried out before the gate oxide treatment. Specifically, as for the higher threshold level MOSFETs of n- and p-types, implantation treatments of fluorine ions are independently carried out with unique implantation conditions.
REFERENCES:
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4881112 (1989-11-01), Matsushita
patent: 4912054 (1990-03-01), Tomassetti
patent: 5049519 (1991-09-01), Teng
patent: 5428239 (1995-06-01), Okumura et al.
patent: 5495122 (1996-02-01), Tada
patent: 5600164 (1997-02-01), Ajika et al.
patent: 5795627 (1998-08-01), Mehta et al.
patent: 5866445 (1999-02-01), Baumann
patent: 5882993 (1999-03-01), Gardner et al.
patent: 5930613 (1999-07-01), Schlais et al.
patent: 5989948 (1999-11-01), Vines et al.
patent: 6037222 (2000-03-01), Huang et al.
patent: 6040019 (2000-03-01), Ishida et al.
patent: 6060753 (2000-05-01), Campardo et al.
patent: 6107134 (2000-08-01), Lu et al.
patent: 6137144 (2000-10-01), Tsao et al.
patent: 6143594 (2000-11-01), Tsao et al.
patent: 6146948 (2000-11-01), Wu et al.
patent: 6184093 (2001-02-01), Sung
patent: 6207510 (2001-03-01), Abeln et al.
patent: 6258673 (2001-07-01), Houlihan et al.
patent: 6297103 (2001-10-01), Ahn et al.
patent: 6303521 (2001-10-01), Jeng
patent: 6335262 (2002-01-01), Crowder et al.
patent: 6339001 (2002-01-01), Bronner et al.
patent: 20010040256 (2001-11-01), Trivedi et al.
patent: 10-335656 (1998-12-01), None
patent: 11-162973 (1999-06-01), None
Kimizuka Naohiko
Kudo Tomohiko
McGinn & Gibb PLLC
NEC Electronics Corporation
Soward Ida M.
Zarabian Amir
LandOfFree
Fabrication of low power CMOS device with high reliability does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of low power CMOS device with high reliability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of low power CMOS device with high reliability will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3509751