Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-06-14

2005-06-14

Tan, Vibol (Department: 2819)

Electronic digital logic circuitry

Interface

Supply voltage level shifting

C326S083000, C327S534000

Reexamination Certificate

active

06906551

ABSTRACT:
A semiconductor integrated circuit device comprising a logical circuit including a MIS transistor formed on a semiconductor substrate, a control circuit for controlling a threshold voltage of the MIS transistor forming the logical circuit, an oscillation circuit including a MIS transistor formed on the semiconductor substrate, the oscillation circuit being constructed so that the frequency of an oscillation output thereof can be made variable, and a buffer circuit, in which the control circuit is supplied with a clock signal having a predetermined frequency and the oscillation output of the oscillation circuit so that the control circuit compares the frequency of the oscillation output and the frequency of the clock signal to output a first control signal, the oscillation circuit is controlled by the first control signal so that the frequency of the oscillation output corresponds to the frequency of the clock signal, the control of the frequency of the oscillation output being performed in such a manner that the first control signal controls a threshold voltage of the MIS transistor forming the oscillation circuit, and the buffer circuit is constructed so that it is inputted with the first control signal to output a second control signal corresponding to the first control signal, the second control signal controlling the threshold voltage of the MIS transistor forming the logical circuit.

REFERENCES:
patent: 5352939 (1994-10-01), Hirabayashi et al.
patent: 5420528 (1995-05-01), Shigehara
patent: 5612643 (1997-03-01), Hirayama
patent: 5672995 (1997-09-01), Hirase et al.
patent: 5694072 (1997-12-01), Hsiao et al.
patent: 5773855 (1998-06-01), Colwell et al.
patent: 5796129 (1998-08-01), Mizuno
patent: 5894142 (1999-04-01), Fiduccia et al.
patent: 5920089 (1999-07-01), Kanazawa et al.
patent: 6046627 (2000-04-01), Itoh et al.
patent: 6191615 (2001-02-01), Koga
patent: 6489833 (2002-12-01), Miyazaki et al.
patent: 61-214448 (1986-09-01), None
patent: 3167795 (1991-07-01), None
patent: 5108194 (1993-04-01), None
patent: 5110427 (1993-04-01), None
patent: 5152935 (1993-06-01), None
patent: 7066631 (1995-03-01), None
patent: 8-274620 (1996-10-01), None
patent: EP 742507 (1996-11-01), None
patent: 8-314506 (1996-11-01), None
patent: 9036246 (1997-02-01), None
patent: 188982 (2004-06-01), None
Fujii et al., A 45ns 16Mb DRAM with Triple-Well Structure, ISSCC 89/Friday, Feb. 17, 1989, 1989 IEEE Int'l Solid-State Circuits Conference.
Chen et al., A High Speed SOI Technology with 12ps/18ps Gate Delay Operating at 5V/1.5V, 1992 IEEE, pp. 2.5.1-2.5.4.
Soden et al., Identifying Defects in Deep-Submicron CMOS Ics,The Practical Engineers, Sep. 1996, pp. 66-71.
Translation of Final Decision of Rejection, Issue No. 188982, Issue Date Jun. 1, 2004; Patent Application No. Hei 8-349427.
English Translation of Japanese Office Action dated Feb. 24, 2004.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3509656