Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S492000, C257S493000
Reexamination Certificate
active
06853034
ABSTRACT:
The invention provides a semiconductor device exhibiting a stable and high breakdown voltage, which is manufactured at a low manufacturing cost. The semiconductor device of the invention includes an n-type silicon substrate; a p-type base region in the surface portion of substrate; an n-type drain region in the surface portion of n-type substrate; a p-type offset region in the surface portion of n-type substrate; an n-type source region in the surface portion of p-type base region; a p-type contact region in the surface portion of p-type base region; a gate electrode above the extended portion of p-type base region extending between n-type source region and n-type substrate (or p-type offset region), with a gate insulation film interposed therebetween; an insulation film on gate electrode and p-type offset region; a source electrode on n-type source region; and a drain electrode on n-type drain region. The p-type offset region is formed of a first p-type sub-region, a second p-type sub-region, and a third p-type sub-region.
REFERENCES:
patent: 5432370 (1995-07-01), Kitamura et al.
patent: 5705842 (1998-01-01), Kitamura et al.
patent: 6069396 (2000-05-01), Funaki
patent: 6614089 (2003-09-01), Nakamura et al.
patent: 6-120510 (1994-04-01), None
“Lowered on-state resistance of lateral power MOSFET with high withstand voltage for Intelligent Power Device”; Uno et al.; The Institute of Electrical Engineers of Japan, EDD-93-21, SPC-93-43; pp. 21-29; Oct. 7, 1993.
Fujishima Naoto
Kitamura Akio
Matsuzaki Kazuo
Saito Masaru
Tada Gen
Fuji Electric & Co., Ltd.
Loke Steven
Rossi, Kimms & McDowell
LandOfFree
Semiconductor device exhibiting a high breakdown voltage and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device exhibiting a high breakdown voltage and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device exhibiting a high breakdown voltage and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3509309