Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-09
2005-08-09
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257S333000, C257S344000, C257S408000, C257S412000, C438S207000, C438S218000, C438S199000, C438S299000, C438S300000
Reexamination Certificate
active
06927459
ABSTRACT:
A gate electrode is provided via a gate insulating film formed between the source and drain regions on a semiconductor substrate, wherein the sidewall of the gate electrode excluding the exposed part formed at the upper part thereof facing the source and drain regions is covered with a sidewall insulating film, and an epitaxial film is formed on the exposed part of the sidewall of the gate electrode but not formed on a top surface of the gate electrode. An element isolation region formed on the semiconductor substrate is composed of a first insulating film formed in the semiconductor substrate and a second insulating film which is formed inside the first insulating film and has a lower epitaxial growth rate than that of the first insulating film, and the surface of the source and drain regions is covered with a silicon layer, part of which runs onto the surface of the first insulating film.
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Hokazono Akira
Takayanagi Mariko
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Forde Remmon R.
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