Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-09
2005-08-09
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S273000, C257S272000
Reexamination Certificate
active
06927460
ABSTRACT:
A structure of and a method for making an isolated NMOS transistor using standard BiCMOS processing steps and techniques. No additional masks and processing steps are needed for the isolated NMOS device relative to the standard process flow. A P-type substrate with an overlaying buried N-type layer overlaid with a buried p-type layer below a P-well is shown. An N-type region surrounds and isolates the P-well from other devices on the same wafer. N+ regions are formed in the p-well for the source and drain connections and poly or other such electrical conductors are formed on the gate, drain and source structures to make the NMOS device operational. Parasitic bipolar transistors are managed by the circuit design, current paths and biasing to ensure the parasitic bipolar transistors do not turn on.
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Hahn Daniel J.
Harley-Stead Michael
Hulfachor Ronald B.
Leibiger Steven M.
Cesari and McKenna LLP
Fairchild Semiconductor Corporation
Flynn Nathan J.
Mandala Jr. Victor A.
Paul, Esq. Edwin H.
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