Low defect pre-emitter and pre-base oxide etch for bipolar...

Details Low defect pre-emitter and pre-base oxide etch for bipolar... Low defect pre-emitter and pre-base oxide etch for bipolar...

2005-02-22

2005-02-22

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S714000, C438S309000

Reexamination Certificate

active

06858532

ABSTRACT:
An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides reduced capacitance and helps to achieve high speed. An apparatus is also described for practicing the disclosed process.

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patent: 6620729 (2003-09-01), May
patent: 10-36970 (1998-02-01), None

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