Semiconductor device

Details Semiconductor device Semiconductor device

2005-06-28

2005-06-28

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S339000

Reexamination Certificate

active

06911692

ABSTRACT:
A MOS semiconductor device includes n−-type surface regions, which are extended portions of an n−-type drift layer12extended to the surface of the semiconductor chip. Each n−-type surface region14is shaped with a stripe surrounded by a p-type well region. The surface area ratio between n−-type surface regions14and p-type well region13including an n+-type region15is from 0.01 to 0.2. The MOS semiconductor device further includes, in the breakdown withstanding region thereof, a plurality of guard rings, the number of which is equal to or more than the number n calculated from the following equation n=(Breakdown voltage Vbr (V))/100, and the spacing between the adjacent guard rings is set at 1 μm or less.

REFERENCES:
patent: 4003072 (1977-01-01), Matsushita et al.
patent: 4399449 (1983-08-01), Herman et al.
patent: 4412242 (1983-10-01), Herman et al.
patent: 4573066 (1986-02-01), Whight
patent: 4602266 (1986-07-01), Coe
patent: 4809045 (1989-02-01), Yilmaz
patent: 5028548 (1991-07-01), Nguyen
patent: 5075739 (1991-12-01), Davies
patent: 5338961 (1994-08-01), Lidow et al.
patent: 5345101 (1994-09-01), Tu
patent: 5510634 (1996-04-01), Okabe et al.
patent: 6114726 (2000-09-01), Barkhordarian
patent: 6476456 (2002-11-01), Boden, Jr.
patent: 6828645 (2004-12-01), Jimbo et al.
patent: 2003/0218220 (2003-11-01), Takahashi et al.
patent: 2004/0104430 (2004-06-01), Letavic et al.
patent: 2004/0113200 (2004-06-01), Kobayashi et al.
patent: 0 115 093 (1984-08-01), None
patent: 0 671 769 (1995-09-01), None
patent: 0 749 163 (1996-12-01), None
patent: 1427014 (1976-03-01), None
patent: 2 161 649 (1986-01-01), None
“Optimization and Surface Charge Sensitivity of High-Voltage Blocking Structures with Shallow Junctions”; Hamza Yilmaz: Jul. 1991; IEEE Transactions on Electron Devices, vol. 38, No. 7; pp. 1666-1675.
“A Parametric Study of Power Mosfets”; Chenming Hu; Proceedings of the Conference of Rec. Power Electronics Specialists, 1979 IEEE; pp. 385-395.

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