Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-02-08
2005-02-08
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S780000, C438S623000, C438S960000
Reexamination Certificate
active
06852648
ABSTRACT:
A process for fabricating an integrated semiconductor device with a low dielectric constant material and an integrated semiconductor device with the low dielectric constant material interposed between two conductors is disclosed. The low dielectric constant material has a dielectric constant of less than about 2.8. The low dielectric constant material is a porous glass material with an average pore size of less than about 10 nm. The low dielectric constant material is formed on a semiconductor substrate with circuit lines thereover by combining an uncured and unmodified glass resin with an amphiphilic block copolymer. The amphiphilic block copolymer is miscible in the uncured glass resin. The mixture is applied onto the semiconductor substrate and the glass resin is cured. The glass resin is further processed to decompose or otherwise remove residual block copolymer from the cured glass resin.
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Nalamasu Omkaram
Pai Chien-Shing
Reichmanis Elsa
Yang Shu
Agere Systems Inc.
Guerrero Maria F.
Lerner David Littenberg Krumholz & Mentlik LLP
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