Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-08
2005-11-08
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000
Reexamination Certificate
active
06963096
ABSTRACT:
The invention relates to a magnetoresistive semiconductor element, including a first contact and a second contact, and also a layer of a nonmagnetic semiconductor arranged between the first contact and the second contact. The first contact is composed of a semi-magnetic material. The semi-magnetic material is a strongly paramagnetic material whose electron spins have no preferential direction without an action of an external magnetic field. Under the action of an external magnetic field, the electrons are spin-polarized in the first contact. When a voltage is applied this results in the injection of spin-polarized electrons into the nonmagnetic semiconductor. As a result, in the nonmagnetic semiconductor, only one of the spin channels can be used for transporting the charge carriers, so that a positive magnetoresistive effect is obtained.
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Molenkamp Laurens
Schmidt Georg
Greenberg Laurence A.
Huynh Andy
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
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