Semiconductor memory with gate at least partially located in...

Details Semiconductor memory with gate at least partially located in... Semiconductor memory with gate at least partially located in...

2005-08-23

2005-08-23

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S314000

Reexamination Certificate

active

06933556

ABSTRACT:
A semiconductor memory comprises: a first conductivity type semiconductor substrate and one or more memory cells each constituted of an island-like semiconductor layer having a recess on a sidewall thereof, a charge storage layer formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, and a control gate formed on the charge storage layer, wherein at least one charge storage layer of said one or more memory cells is partially situated within the recess formed on the sidewall of the island-like semiconductor layer.

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“Performance of the 3-D Pencil Flash EPROM Cell and Memory Array”, Pein et al., XP000582412 IEEE Transactions, Nov. 1995, No. 11, pp. 1982-1991.

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