Selective passivation of exposed silicon

Details Selective passivation of exposed silicon Selective passivation of exposed silicon

2005-06-14

2005-06-14

Quach, T. N. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

43, 43, 43

Reexamination Certificate

active

06905953

ABSTRACT:
A method for applying a passivation layer selectively on an exposed silicon surface from a liquid phase solution supersaturated in silicon dioxide. The immersion is conducted at substantially atmospheric temperature and pressure and achieves an effective passivation layer in an abbreviated immersion time, and without subsequent heat treatment. In one embodiment, rapid coating of a wafer back side with silicon dioxide permits the use of a high-speed electroless process for plating the bond pad with a solder-enhancing material. In another embodiment, the walls of via holes and microvia holes in a silicon body may be passivated by immersion in the supersaturated solution prior to plugging the holes with conductive material.

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