Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-27
2005-12-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S674000, C438S675000, C438S685000, C438S687000
Reexamination Certificate
active
06979642
ABSTRACT:
A method of forming a conductive structure such as a copper conductive structure, line, or via is optimized for large grain growth and distribution of alloy elements. The alloy elements can reduce electromigration problems associated with the conductive structure. The conductive structure is self-annealed or first annealed in a low temperature process over a longer period of time. Another anneal is utilized to distribute alloy elements.
REFERENCES:
patent: 6022808 (2000-02-01), Nogami et al.
patent: 6077780 (2000-06-01), Dubin
patent: 6124055 (2000-09-01), Stocchiero
patent: 6204179 (2001-03-01), McTeer
patent: 6423637 (2002-07-01), Kim
patent: 6486560 (2002-11-01), Lopatin
patent: 6548395 (2003-04-01), Woo et al.
patent: 6630741 (2003-10-01), Lopatin et al.
patent: 6660633 (2003-12-01), Lopatin et al.
patent: 6717236 (2004-04-01), Lopatin et al.
patent: 6743310 (2004-06-01), Ngo
patent: 2002/0192940 (2002-12-01), Lee et al.
Besser Paul R.
Buynoski Matthew S.
Tran Minh Q.
Wang Connie Pin-Chin
Advanced Micro Devices , Inc.
Foley & Lardner LLP
Fourson George
Garcia Joannie Adelle
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