Selective silicidation of gates in semiconductor devices to...

Details Selective silicidation of gates in semiconductor devices to... Selective silicidation of gates in semiconductor devices to...

2005-08-30

2005-08-30

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S318000, C257S413000

Reexamination Certificate

active

06936882

ABSTRACT:
A semiconductor device includes a substrate and an insulating layer formed on the substrate. A first device may be formed on the insulating layer. The first device may include a first fin formed on the insulating layer, a first dielectric layer formed on the first fin, and a partially silicided gate formed over a portion of the first fin and the first dielectric layer. A second device also may be formed on the insulating layer. The second device may include a second fin formed on the insulating layer, a second dielectric layer formed on the second fin, and a fully silicided gate formed over a portion of the second fin and the second dielectric layer.

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