Method of forming geometric deep trench capacitors

Details Method of forming geometric deep trench capacitors Method of forming geometric deep trench capacitors

2005-11-15

2005-11-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S242000, C438S243000, C438S244000, C438S386000, C438S387000, C438S396000, C438S702000, C438S756000, C438S757000, C438S787000, C438S791000, C438S942000

Reexamination Certificate

active

06964926

ABSTRACT:
A method of forming capacitors with geometric deep trenches. First, a substrate with a pad structure formed thereon is provided, and a first hard mask layer is formed on the pad structure. Next, a second hard mask layer is formed on the first hard mask layer. Next, a spacer layer is formed in the first opening on the first hard mask layer to expose a second opening. Next, a third hard mask layer is filled the second opening, and the spacer layer is removed. Next, the first hard mask layer is etched to expose a third opening with a salient of the first hard mask layer, with the second hard mask layer and the third hard mask layer acting as masks. Finally, the first hard mask layer, the pad structure, and the substrate are etched to form a geometric deep trench.

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